Dr. Zarak Bhat, a distinguished PhD graduate from the National Institute of Technology (NIT) Srinagar in India, has taken on the role of Postdoctoral Research Associate at the University of Edinburgh, UK. At the university's AI Hub, she will work on integrating artificial intelligence methodologies into electron device design workflows, with a particular focus on optimisation, performance prediction, and enhancing semiconductor design productivity. Bhat is notable for being the first PhD scholar from the Nanoelectronics Research and Development Group at NIT Srinagar. Her doctoral research concentrated on power Gallium Nitride (GaN) models, supervised by Dr. Sheikh Aamir Ahsan, and has been published in esteemed journals such as IEEE Transactions on Electron Devices. Bhat's academic journey includes a BE in Electronics and Communication from the University of Kashmir and an MTech from Jamia Millia Islamia, where she honed her skills in research and development. Additionally, she participated in the advanced training segment of the India Semiconductor Workforce Development Program (ISWDP) and has received several accolades, including the ISWDP Samsung Student Fellowship.